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Liquid phase epitaxy, structural, and electrical properties of (Si2)1-x(GaP)x solid solutions on Si(111) substrates

А. S. SAIDOV1, А. SH. RAZZOKOV2,* , SH. N. USMONOV1, D. V. SAPAROV1, R. A. RAZZAKOV3, U. KH. RAKHMONOV1

Affiliation

  1. Physical-Technical Institute NPO “Physics-Sun of the Academy of Sciences of the Republic of Uzbekistan, 2B, Ch. Aitmatov St., Tashkent, 100084, Uzbekistan
  2. Department of Technique, Urgench State University, 14 Kh.Alimdjan, Urgench, 220100, Uzbekistan
  3. ООО “GEOSTRATA” Shaykhontohur district, Labzak municipal group, Labzak street, house 64A. Tashkent, Republic of Uzbekistan

Abstract

The paper presents the production of a heteroepitaxial GaP layer on a Si(111) substrate using a buffer, continuous epitaxial layer (Si2)1-x(GaP)x 0≤x≤1 from a tin solution-melt. The generalized moments of the components of the solid solution (Si2)1-x(GaP)x were calculated and it was shown that the formation of epitaxial layers is more probable: m**GaP=3.96856·10-9 C/m and m**Si2=2.55856·10-9 C/m. The single crystallinities of the grown epitaxial layers are investigated. The triangles formed at the beginning of growth on the surface of the Si substrate show that the (Si2)1-x(GaP)x layers began to grow in the direction with the orientation (111). Structural study showed an increase in the lattice period of the film a(Si2)1-x(GaP)x=0.54619±0.00004 nm relative to Si (aSi = 0.54307±0.00004 nm) and GaP (aGaP=0.54451±0.00004 nm), which is explained by the arising compressive stresses along the plane of the epitaxial layers. SEM analyses confirmed the presence of Si, Ga, P components in the (Si2)1-x(GaP) film. Using CoreAFM, nanosized height nanoscale islands with a size of 50-60 nm and nano-pits with a depth of 8 nm on the surface of the (Si2)1-x(GaP) film were detected. The films had n-type conductivity with a concentration of n=5∙1018 cm-3 and a mobility of µ=80 cm2V-1sec-1 of charge carriers at 300 K. The film thicknesses varied within 15-30 µm depending on the growth conditions. The photosensitivity of the pSi–n(Si2)1-x(GaP)x structure covered the spectral range of 1.1÷2.58 eV..

Keywords

Epitaxial layers, Heterostructure, Solid solution, Solution-melt, Lattice constants.

Submitted at: June 26, 2025
Accepted at: Aug. 4, 2026

Citation

А. S. SAIDOV, А. SH. RAZZOKOV, SH. N. USMONOV, D. V. SAPAROV, R. A. RAZZAKOV, U. KH. RAKHMONOV, Liquid phase epitaxy, structural, and electrical properties of (Si2)1-x(GaP)x solid solutions on Si(111) substrates, Journal of Optoelectronics and Advanced Materials Vol. 28, Iss. 7-8, pp. 365-375 (2026)