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Location of P and As dopants and p-type doping of ZnO

PAUL FONS1,* , ALEXANDER V. KOLOBOV1, JUNJI TOMINAGA2, BÉRANGÈRE HYOT3, BERNARD ANDRÉ3

Affiliation

  1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology, Tsukuba Central 4, Higashi 1-1-1, Tsukuba, Ibaraki, 305-8562, Japan and SPring-8, Japan Synchrotron
  2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology, Tsukuba Central 4, Higashi 1-1-1, Tsukuba, Ibaraki, 305-8562, Japan
  3. CEA, LETI, MINATEC, F-38054 Grenoble, France

Abstract

Although ZnO has long been touted as an excellent material for UV light-emitting diodes and lasers, p-type doping still remains a challenge. In recent reports claiming that p-type doping can be achieved using nitrogen, arsenic and phosphorus, the spatial location of the dopants in the “successful” samples has not been identified. In this work, we present simulation results of x- ray absorption spectra for different locations of p-type dopants and argue that this technique is a powerful tool to experimentally investigate the location of group V dopants and to establish a correlation between the dopant location and corresponding conductivity type..

Keywords

P + As dopants, P-type ZnO.

Submitted at: Dec. 5, 2013
Accepted at: Jan. 22, 2014

Citation

PAUL FONS, ALEXANDER V. KOLOBOV, JUNJI TOMINAGA, BÉRANGÈRE HYOT, BERNARD ANDRÉ, Location of P and As dopants and p-type doping of ZnO, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 1-2, pp. 1-5 (2014)