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Low frequency noise (1/f) in the “intrinsic oxide-p-InSe” heterostructures

S. I. DRAPAK1,* , A. P. BAKHTINOV1, Z. D. KOVALYUK1

Affiliation

  1. Frantsevich Institute of Material Sciences Problems, National Academy of Sciences of Ukraine, Chernivtsi Department, 5, Iryna Vilde Str., 58001 Chernivtsi, Ukraine

Abstract

The character of noise in photosensitive intrinsic oxide – p-InSe heterostructures is investigated for those obtained by thermal oxidation of the base semiconductor at T = 400°C for 15-120 min. It is established that the determinative noise in such structures is 1/f noise. It is shown that the observed dependences of noise spectral density on reverse bias differ from the Hooge’s relationship S(f)∼const⋅Vn, which is correct for majority of conventional semiconductors. It is shown that in such structures the signal-to-noise ratio can be related to structural peculiarities of rectifying barrier formation and changes of its parameters during the growth of the oxide film on the base semiconductor surface..

Keywords

InSe, Intrinsic oxide, Noise, Signal-to-noise ratio, Interface.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

S. I. DRAPAK, A. P. BAKHTINOV, Z. D. KOVALYUK, Low frequency noise (1/f) in the “intrinsic oxide-p-InSe” heterostructures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1442-1445 (2007)