"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Magnesium doped (Zr0.8, Sn0.2)TiO4 ceramics for microwave devices

L. NEDELCU1,* , A. IOACHIM1, M. I. TOACSĂN1, M. G. BANCIU1, C. A. DUŢU1, F. LIFEI1, F. VASILIU1, G. STOICA2

Affiliation

  1. National Institute of Materials Physics, P.O. Box MG-7, RO 077125, Bucharest-Magurele, Romania
  2. S.C. Armtech S.A., Curtea de Argeş, Romania

Abstract

Magnesium doped (Zr0.8Sn0.2)TiO4 material has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1270 ÷ 1315 oC for 2 hours. The effect of sintering temperature on structural and dielectric properties was investigated. The 0.2 wt.% MgO addition improves the sintering process and well sintered samples with a high value of bulk density were achieved. The material exhibits a dielectric constant ε r ~ 36.6 and high values of the Qxf product, greater than 61000 at microwave frequencies. The dielectric properties make the magnesium doped (Zr0.8Sn0.2)TiO4 material very attractive for such microwave applications as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc..

Keywords

Zirconium tin titanate, Magnesium doped ZST, Sintering temperatures, Microwaves, Dielectric resonators.

Submitted at: Nov. 14, 2006
Accepted at: June 15, 2007

Citation

L. NEDELCU, A. IOACHIM, M. I. TOACSĂN, M. G. BANCIU, C. A. DUŢU, F. LIFEI, F. VASILIU, G. STOICA, Magnesium doped (Zr0.8, Sn0.2)TiO4 ceramics for microwave devices, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 6, pp. 1727-1729 (2007)