"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

MeV electron irradiation of O+ or P+ implanted Si-SiO 2 structures♣

S. KASCHIEVA1,* , CH. ANGELOV2, S. N. DMITRIEV3

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Institute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd.,1784 Sofia, Bulgaria
  3. Joint Institute of Nuclear Research, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow region 141980, Russia

Abstract

O + or P+ ion implanted Si-SiO 2 structures irradiated by high-energy electrons have been studied using Rutherford back-scattering spectroscopy in combination with a channelling technique (RBS/C). The samples were implanted by a dose of 10 12 cm -2 of O + or P + ions, and then irradiated by two doses of 20 MeV electrons – 2.5x10 13 el.cm -2 and 1x10 15 el.cm -2 . The changes in the silicon and oxygen concentrations of the implanted samples were observed after electron irradiation. Such changes have been previously observed in Si-SiO 2 structures implanted by a higher dose (10 16 cm -2) of Si + ions followed by MeV electron irradiation. The results showed that the type of implanted ion determines the concentration changes observed in the samples after high-energy electron irradiation. In the case reported here, the RBS/C spectra demonstrate that the 20-MeV electron irradiation increases the oxygen and silicon concentrations in Si-SiO 2 samples implanted by O + ions only, connected with the displacement of these atoms from their normal lattice sites..

Keywords

Electron irradiation, Ion implantation, Si-SiO2 structure, RBS.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

S. KASCHIEVA, CH. ANGELOV, S. N. DMITRIEV, MeV electron irradiation of O+ or P+ implanted Si-SiO 2 structures♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1502-1504 (2009)