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Modeling vanadium oxide film growth in the spot of a cw CO2 laser

A. M. BALINT1,* , R. SZABO2, L. NÁNAI3, ST. BALINT2

Affiliation

  1. Dept. of Physics, West University of Timisoara, Blv: V. Parvan 4, 300223 - Timisoara, Romania
  2. Dept. of Computer Science, West University of Timisoara, Blv: V. Parvan 4, 300223 - Timisoara, Romania
  3. Dept. of Physics, University of Szeged, Dóm sqr 9, Szeged, Hungary

Abstract

In this paper a nonisothermal model which describes the oxide layer thickness evolution and the sample temperature variation in the case of a small vanadium plate in a cwCO2 laser beam is considered. In the framework of the model the equilibrium temperature T*(P) of the sample; the equilibrium oxide layer thickness x*(P); the moment of time t0(P) when 1nm oxide layer thickness is achieved; the sample temperature T(t0(P)) at the moment t0(P); the moment of time t1(P) when the equilibrium temperature is achieved; the oxide layer thickness x(t1(P)) at the moment when the equilibrium temperature is achieved; the growth speed v(t0 (P)) at the moment t0 (P) and the growth speed v(t1(P)) at the moment t1(P) are computed in function of the laser power P , which varies in the range 4 ÷ 25 [W] . It is shown that starting from the room temperature (T’ = 300[k]) if P increases, then T* (P) increases and x* (P) decreases at the beginning but after that increases t0 (P) is of order 10−9 [s] and it is constant; T(t0 (P)) is practically equal to the starting room temperature; t1(P) is of order 100 ÷101 [s] and decreases when P increases; x(t1(P)) is of order 10−5 [m] and decreases when P increases; v(t0 (P)) is of order 10−1 [m/s] and it is constant; due to the evaporation v(t1(P)) is negative it is of order 10−8 ÷10−9 [m/s] and decreases when P increases. In particular it is shown that the experimental results, presented in [7], concerning the oscillogram of the sample temperature, the evolution of the oxide layer thickness can be obtained with high accuracy in the framework of the model. It is found that the oxide layer thickness evolutions for P = 4 [W] and P = 17 [W] correspond to the two oxide types VO and V2O5, as is reported in [7]. How well the computed results are in agreement with other experimental results depends on the smallness of the effect of the processes which were not incorporated in the model. The advantage of this theoretical analysis is the possibility to obtain explicit results from which the limits ....

Keywords

Laser beams, Oxidation, Vanadium, Vanadium oxide.

Submitted at: March 31, 2008
Accepted at: Aug. 28, 2008

Citation

A. M. BALINT, R. SZABO, L. NÁNAI, ST. BALINT, Modeling vanadium oxide film growth in the spot of a cw CO2 laser, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 9, pp. 2425-2432 (2008)