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Modelling of Cu2SnSeS chalcogenide quantum dots for optoelectronic applications

M. IRSHAD AHAMED1,* , E. EDWARD ANAND2, SAAHIRA AHAMED3, N. PRATHAP1

Affiliation

  1. Department of Electronics and Communication Engineering, E.G.S. Pillay Engineering College, Nagapattinam – 611002, Tamilnadu, India
  2. Department of Science and Humanities, E.G.S. Pillay Engineering College, Nagapattinam – 611002, Tamilnadu, India
  3. Department of Computer Science, College of Computer Science and Information Technology, Jazan University, Jazan, Kingdom of Saudi Arabia

Abstract

Material composition and size dependence are efficient techniques to regulate the absorption and emission of multiplex alloy quantum dots (QDs), similar to the size of binary and ternary QDs. Hence, in this communication we report for the first time, a model to investigate quaternary alloy Cu2SnSeS to analyze the size and composition dependence of energy bandgap variation and wavelength by interpolation principles, Bohr and hyperbolic band model. The results underpin that the frequency of oscillation is inversely proportional to the energy bandgap and increases in copper proportion decrease the energy bandgap which offers plenty of opportunities to design for the application of various optoelectronic devices. Ultimately, these quaternary alloy QDs have been used as a source for fiber optic communication as a promising alternative to lead and cadmium-containing QDs..

Keywords

Chalcogenide, Optoelectronic, Quantum dots, C-band.

Submitted at: Oct. 20, 2022
Accepted at: April 5, 2023

Citation

M. IRSHAD AHAMED, E. EDWARD ANAND, SAAHIRA AHAMED, N. PRATHAP, Modelling of Cu2SnSeS chalcogenide quantum dots for optoelectronic applications, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 3-4, pp. 169-175 (2023)