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Morphological evolution of silicon ablated via nanosecond pulsed laser

MING GUO1,2, YONG-XIANG ZHANG33,* , NAN LI1,2, JI-XING CAI44

Affiliation

  1. Jilin Engineering Normal University, Institute for Interdisciplinary Quantum Information Technology, Changchun 130052, China
  2. Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, China
  3. Changchun Institute of Electronic Science and Technology, Changchun 130000, China
  4. Changchun University of Science and Technology, Changchun 130022, China

Abstract

In order to explore the laws and mechanisms of the microstructure and ablation of silicons irradiated via nanosecond pulsed lasers, a nanosecond laser with a wavelength of 1064 nm was used to irradiate intrinsic silicon and p-type, boron-doped silicon targets. The irradiated morphology of the silicons under different laser conditions was investigated, and the influence of laser energy density, pulse number, incident angle, and target thickness on the cleavage and ablation morphology was analyzed. This study can provide a basis for laser precision machining as well as for understanding the resistance of silicon-based devices to laser damage..

Keywords

Silicon, Nanosecond laser, Cleavage, Ablation.

Submitted at: May 21, 2021
Accepted at: Feb. 11, 2022

Citation

MING GUO, YONG-XIANG ZHANG3, NAN LI, JI-XING CAI4, Morphological evolution of silicon ablated via nanosecond pulsed laser, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 1-2, pp. 51-55 (2022)