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Multiple Quantum Well of GaAs VCSEL structure

FARAH Z. JASIM1, KHALID OMAR1,* , Z. HASSAN1

Affiliation

  1. Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia 11800 Penang, Malaysia

Abstract

The numerical investigation of the performance of 850 nm GaAs multiple quantum wells (MQW) vertical cavity surface emitting laser (VCSEL) structure was carried out. Laser technology-integrated program ISETCAD simulation has been used to enhance the device performance, we proposed a new model where a few low-doped distributed Bragg reflector (DBR) layers are introduced just after spacer layers in order to achieve a better matching of lattice constants, which finally provide high output power and better efficiency. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. All material parameters are evaluated based on the recent literature values..

Keywords

Multiple Quantum Well, VCSEL, Doping concentration.

Submitted at: Oct. 30, 2009
Accepted at: Nov. 19, 2009

Citation

FARAH Z. JASIM, KHALID OMAR, Z. HASSAN, Multiple Quantum Well of GaAs VCSEL structure, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1723-1727 (2009)