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Nanostructured transparent and luminescent Y2O3:Eu3+ thin films

K. M. NISSAMUDEEN1, K. G. GOPCHANDRAN1,*

Affiliation

  1. Department of Optoelectronics, University of Kerala, Kariavattom-695 581, India

Abstract

Preparation of transparent and photoluminescent Y2O3:Eu3+ thin films on quartz substrates using pulsed laser deposition technique are reported. Annealing of these films, in the temperature range 973-1073 K, results in enhanced photoemission. The photoemission was found to be maximum for 8 wt.% Eu3+ doped Y2O3 films, resulting from 5D0–7F2 transition within europium, emitting red light at 612 nm . The effect of annealing on the structure and morphology of the films are described with XRD, Raman, SEM and AFM. Films annealed at 973 K shows a preferential growth along (222) crystal plane of the cubic Y2O3 crystal lattice, and a crystallite size of 49 nm. With increase of annealing temperature, a transition in surface morphology at first from amorphous to nanorods at 773 K and then to nanoislands at 1073 K is described with AFM images. Friction force microscopic images were used to understand the compositional domains on the surface of the films..

Keywords

Y2O3:Eu, Luminescence, Thin film, Nanostructure.

Submitted at: April 24, 2008
Accepted at: Oct. 7, 2008

Citation

K. M. NISSAMUDEEN, K. G. GOPCHANDRAN, Nanostructured transparent and luminescent Y2O3:Eu3+ thin films, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2719-2726 (2008)