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I agree, do not show this message again.Nitridation and crystallization of titanium oxynitride by thermal treatment of TiO2-anatase films in NH
C. TRAPALIS1, J. M. CALDERON-MORENO2, N. TODOROVA1, V. S. TEODORESCU3, M. STOICA2, M. NICOLESCU2, M. ANASTASESCU2, M. GARTNER2,* , M. ZAHARESCU2
Affiliation
- Institute of Materials Science, NCSR “Demokritos”, 153 10, Athens, Greece
- nstitute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, 202 Splaiul Independentei, 060021, Bucharest, Romania
- National Institute of Material Physics, 105 bis Atomistilor Street, 077125 Bucharest-Magurele, Romania
Abstract
Nitrogen is often used for doping TiO 2 films to improve their photocatalytic properties in visible light. Multilayer TiO 2 anatase films were deposited by sol–gel method on quartz substrate and thermally treated in O 2 and NH 3 flow in 500-800 °C range. The effect of the annealing treatment (temperature and atmosphere) on the structural properties of TiO 2 films was studied by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Nitridation causes the amorphization of the anatase tetragonal phase at 600 °C. The film re-crystallization into the cubic oxynitride phase is observed at 800 °C. EDX results confirms that the incorporation of nitrogen into the amorphous films takes place before thermally activated growth of the oxynitride phase and demonstrates that the relative O:N composition in the crystalline phase is dependent on the temperature of the thermal treatment..
Keywords
sol-gel, TiO 2(N) films, XRD, SEM, TEM, SAED, Raman Spectroscopy.
Submitted at: Nov. 2, 2009
Accepted at: Nov. 19, 2009
Citation
C. TRAPALIS, J. M. CALDERON-MORENO, N. TODOROVA, V. S. TEODORESCU, M. STOICA, M. NICOLESCU, M. ANASTASESCU, M. GARTNER, M. ZAHARESCU, Nitridation and crystallization of titanium oxynitride by thermal treatment of TiO2-anatase films in NH, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1810-1814 (2009)
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