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Nitride-based photodetectors containing quantum wells in tunable electric fields♣

K. P. KORONA1,* , A. DRABIŃSKA1, J. BORYSIUK2, P. CABAN2

Affiliation

  1. Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  2. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

Abstract

In this study, we present the optical properties (electroreflectance, luminescence and photosensitivity) of nitride nanostructures containing quantum wells (QW) inside GaN/AlGaN cavities designed so that the electric field inside them could be changed. The cavities contained one InGaN QW or two GaN QWs. We have confirmed experimentally that the electric field, controlled by external bias or by optical pumping, could change the properties of the structure. For example, (i) due to the Stark effect, a photoluminescence peak shifted from 2.97 eV to 3.06 eV, when the bias changed from +0.8 V to -2 V, (ii) due to various directions of the electric field inside the structure, the photocurrent changed not only in its value but also in its direction. The structures had non-linear photosensitivity. A double photoexcitation experiment showed that light from a second source could cause amplification or attenuation of the PC signal. It is proposed that the structures can be used to build active photodetectors which change their photoresponse in reaction to an external voltage or to illumination from another source..

Keywords

Quantum wells, Electrical properties, Optical properties, Photodetectors.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

K. P. KORONA, A. DRABIŃSKA, J. BORYSIUK, P. CABAN, Nitride-based photodetectors containing quantum wells in tunable electric fields♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1108-1114 (2009)