"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Numerical simulation for the current density of p-n like-type solar cells

A. NECULAE1,* , M. PAULESCU1

Affiliation

  1. Department of Physics, West University of Timisoara, Bd. V. Parvan No.4, 300223 Timisoara, Romania

Abstract

Numerical simulation is an important tool allowing an easy interpretation of physical phenomena and direct control of the involved parameters in a photovoltaic device. The paper deals with solar cells which consent to a p-n junction modeling under AM0 standard solar spectrum. The charge transport and Poisson’s equations in one dimension are solved in terms of electron density, hole density and electrostatic potential using a finite-element approach. The current density model considers both the diffusion in neutral regions and the drift within depletion layer. The calculations are done for equilibrium and under forward bias voltage. The aim of the numerical computations is to obtain the J-V curves and the conversion efficiency. Results of numerical simulation concerning the influence of the most important material parameters on the cell performances are reported..

Keywords

p-n like-type solar cells, Numerical simulation, Efficiency.

Submitted at: March 31, 2008
Accepted at: Aug. 28, 2008

Citation

A. NECULAE, M. PAULESCU, Numerical simulation for the current density of p-n like-type solar cells, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 9, pp. 2438-2440 (2008)