"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device

KAIKAI XU1,2,* , HAITAO LIU1, QI YU2, ZHIYU WEN1, GUANNPYNG LI3

Affiliation

  1. Defense Key Disciplines Lab of Novel Micro-nano Devices and System Technology, Chongqing University, Chongqing, China 400044
  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China 610054
  3. California Institute for Telecommunications and Information Technology, Irvine, CA 92697

Abstract

In this paper, we discuss the emission of visible light by a monolithically integrated silicon metal-oxide-semiconductor field-effect-transistor (Si-MOSFET) in which the p-n junctions are reverse-biased. The emission of light is observed from reverse-biased p-n junction though silicon is an indirect bandgap material. In this paper new research results with regard to two- and three- terminal Si-LEDs in the p-type MOSFET device are presented. Light emission from the two devices types (1) silicon p-n junction diode (2) silicon p-n junction gate-controlled diode with the junction biased in controlled avalanche breakdown. A multi-mechanism model fitting measured spectra is presented and justified, with the conclusion that the dominant light-emission mechanism is due to a combination of avalanche breakdown and tunneling..

Keywords

Emission, Silicon, Spectral analysis, Transistors.

Submitted at: July 16, 2015
Accepted at: Oct. 28, 2015

Citation

KAIKAI XU, HAITAO LIU, QI YU, ZHIYU WEN, GUANNPYNG LI, On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 11-12, pp. 1680-1688 (2015)