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Optical and holographic properties of nano-sized amorphous semiconductor

S. SAINOV1, V. SAINOV1, J. DIKOVA2, K. BEEV1,*

Affiliation

  1. Central Laboratory of Optical Storage and Processing of Information, Bulgarian Academy of Sciences, 1113 Sofia, P.O. Box 95, Bulgaria
  2. Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, 1040 Sofia, “Acad. G. Bonchev”, bl. 109, Bulgaria

Abstract

The experimental results as well as the theoretical background of evanescent wave holographic recording of gratings with 3.2, 0.88 and 0.37  m pitch (corresponding to spatial frequencies 310, 1140 and 2700 mm-1) in nano-sized As2S3 films are presented. The thickness of the recording medium is 29nm. The grating recording is performed using the interference of surface-propagating reference evanescent wave, created by the total internal light reflection and homogeneous object wave. The optical characteristics of the chalcogenide films – the refractive and absorption indexes are determined by spectrophotometric measurements in the wavelength range 250-650 nm..

Keywords

Nano-scale holographic recording, Amorphous semiconductors.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

S. SAINOV, V. SAINOV, J. DIKOVA, K. BEEV, Optical and holographic properties of nano-sized amorphous semiconductor, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3125-3127 (2007)