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Optical and thermal stability in GexSe10Te90-x chalcogenide films

Y. G. WANG1, M. L. FANG2, R. M. WANG3, L. S. YANG3, J. Y. LIU3, J. S. DING3, Y. PAN4, X. Q. SU3,*

Affiliation

  1. School of Mechanics and Photoelectric Physics, Anhui University of Science and Technology, Huainan, 232001, China
  2. School of Mathematics and Big Data, Anhui University of Science and Technology, Huainan, 232001, China
  3. School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
  4. College of Science, Xi’an University of Architecture and Technology, Xi’an, 710055, China

Abstract

GexSe10Te90-x chalcogenide thin films with varied Ge content from x=17.5 to 27.5 were deposited by e-beam evaporation and their optical properties were investigated under various thermal annealing conditions. The results show that Ge22.5Se10Te67.5 film has a minimal change against thermal annealing in optical band gap, refractive index and thickness, and thus is the most stable composition for the applications in chalcogenide-based optical devices..

Keywords

Chalcogenide, Thin film, Thermal annealing, Stability.

Submitted at: Jan. 14, 2025
Accepted at: Dec. 4, 2025

Citation

Y. G. WANG, M. L. FANG, R. M. WANG, L. S. YANG, J. Y. LIU, J. S. DING, Y. PAN, X. Q. SU, Optical and thermal stability in GexSe10Te90-x chalcogenide films, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 11-12, pp. 574-579 (2025)