"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Optical characterization of As-Ge-S thin films

A. V. STRONSKI1,* , M. VLCEK2, I. D. TOLMACHOV1, H. PRIBYLOVA2

Affiliation

  1. . Lashkarev Institute of Semiconductor Physics NAS Ukraine
  2. Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic

Abstract

Optical characterization of As 12.6Ge 23.8S63.6 thin films was made from transmission spectra measurements using Swanepoel method. Spectral dependences of refractive index were well described by single oscillator model. Raman spectra of initial bulk glasses and evaporated films have shown the presence of the nanoscale intrinsic heterogeneities. Nonlinear optical properties of the films were estimated from optical parameters using different approaches and they were found to be more than two orders of magnitude higher then those of silica glasses..

Keywords

Chalcogenide glasses, Thin films, Non-linear optical properties, Raman spectra.

Submitted at: Oct. 1, 2009
Accepted at: Nov. 19, 2009

Citation

A. V. STRONSKI, M. VLCEK, I. D. TOLMACHOV, H. PRIBYLOVA, Optical characterization of As-Ge-S thin films, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1581-1585 (2009)