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Optical effects on the characteristics of a nanoscale SOI mosfet with vertical gaussian doping profile

K. GOWRI1,* , M. ARUNACHALAM2,* , V. RAJAMANI3

Affiliation

  1. Department of Electronics and Communication Engineering, PSNA CET, Dindigul, Tamilnadu, India
  2. Department of Computer Science and Engineering, K.L.N College of Information Technology, Pottapalayam, Tamilnadu, India
  3. Department of ECE, Vel Tech Multi Tech Dr.Rangarajan Dr.Sakunthala Engineering college, Tamilnadu, India

Abstract

This paper deals with the effects of optical radiation of three dimensional nano scale SOI MOSFET with vertical gaussian doping profile including quantum mechanical effects. The model takes into account all the major effects that determine the device characteristics in the illuminated condition. The device characteristics are obtained using self-consistent solution of 3D Poisson–Schrodinger equations using Liebman’s iteration method. Calculations are carried out to examine the effect of illumination on the surface potential, electric field, current-voltage characteristics and sub threshold characteristics. The obtained characteristics are used to examine the performance of the device for its suitable use as a photo detector in Opto-Electronic Integrated Circuit (OEIC) receivers..

Keywords

Nano scale SOI MOSFET, Gaussian Doping profile, 3D Poisson-Schrodinger Equation, OEIC Receiver.

Submitted at: July 23, 2013
Accepted at: May 15, 2014

Citation

K. GOWRI, M. ARUNACHALAM, V. RAJAMANI, Optical effects on the characteristics of a nanoscale SOI mosfet with vertical gaussian doping profile, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 5-6, pp. 651-658 (2014)