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Optical properties of films of II-VI ternary semiconductor compounds deposited by chemical method

A. OUDHIA1,* , R. DEWANGAN1, P. C. CHOUBEY1

Affiliation

  1. Department of Physics, Government V. Y .T. Autonomous PG College, Durg (Chhattisgarh), India Affiliated to: Pt. Ravishankar Shukla University, Raipur, (Chhattisgarh), India

Abstract

The present paper consists of some interesting results of optical absorption and reflectance spectral studies of some chemically deposited films of CdS-Se relevant for applications in opto- electronics. The parameters like band gap, Urbach energy, extinction coefficient and refractive index are calculated using the data obtained by different studies. Moreover it describes a simple and cost effective method to obtain belt like morphology with approximate thickness between 125nm – 166nm, found to be advantageous for many practical applications..

Keywords

Urbach energy, Deposition from liquid phase, II–VI compounds, Spectral reflectance, Optical absorption.

Submitted at: Aug. 14, 2012
Accepted at: March 13, 2014

Citation

A. OUDHIA, R. DEWANGAN, P. C. CHOUBEY, Optical properties of films of II-VI ternary semiconductor compounds deposited by chemical method, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 327-332 (2014)