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Optical properties of PECVD carbon films on silicon subjected to rapid thermal annealing

E. VLAIKOVA1,* , A. SZEKERES1, S. GEORGIEV1, G. BESHKOV1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Spectral ellipsometry studies have been performed in the range of 400 - 820 nm on hydrogenated amorphous carbon films deposited on c-Si substrates at 340 oC by the 27 MHz plasma decomposition of methanol (CH3OH) vapor. The films have been subjected to rapid thermal annealing (RTA) at 800 and 1000 oC in vacuum (~10-3 Pa). The refractive index and extinction coefficient values of as-deposited films correspond to a polymer-like structure. The decrease of the optical bandgap energy from 3 eV to 1.7 eV caused by RTA suggests a graphitic transformation of the film structure. Selective HF etching of the carbon films has revealed a 4.6 nm thick interfacial region of silicon carbide formed during 1000 oC RTA..

Keywords

Hydrogenated amorphous carbon, Plasma enhanced chemical vapor deposition, Silicon carbide interfacial layer, Spectral ellipsometry, Optical constants.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

E. VLAIKOVA, A. SZEKERES, S. GEORGIEV, G. BESHKOV, Optical properties of PECVD carbon films on silicon subjected to rapid thermal annealing, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 379-381 (2007)