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Optical recording on surface and inside As2S3 thin films

V. GERBREDERS1,* , E. SLEDEVSKIS1, G. LIBERTS1, J. TETERIS2, V. PASHKEVICH1

Affiliation

  1. Daugavpils University, Department of Physics, 1 Parades St., Daugavpils, LV-5400, Latvia
  2. Institute of Solid State Physics, University of Latvia, 8 Kengaraga St., Riga, LV-1063, Latvia

Abstract

Chalcogenide semiconductor films are the classic object for investigation of holographic recording. Nevertheless optical recording usually is (carried out) on a surface of film without the focusing of a laser beam. Recording method of microhologramms on the surface and in the depth (volume) of film layer is interesting for the practical use. It can considerably increase a total informational capacity of recording and storage medium. For this purpose it is necessary to investigate a possibility of optical recording in two and more layers of definite chalcogenide film, in principle. In the present work optical recording was carried out on As2Se3 films by confocal microscope LEICA TCS SP5 at the wavelength 514 and 488 nm. Laser beam was focused up to diametre 0.6 μm on the surface of film and 4-8 μm inside the film respectively. Recording was made by scanning film area from 16 to 64 μm2. The readout was performed at wavelength 633 nm by measuring reflection and transmission before and after recording. The readout was done by scanning film along recording area and its thickness. The results display that reflected signal at recording on the surface and in the depth of film differs in the order of magnitude. Possibility of recording in the As2Se3 films at different wevelengths enable to optimize the ratio of reflected signals at the recording on surface and in the volume of film..

Keywords

Amorphous chalcogenide films, Confocal microscope, Optical recording.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

V. GERBREDERS, E. SLEDEVSKIS, G. LIBERTS, J. TETERIS, V. PASHKEVICH, Optical recording on surface and inside As2S3 thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3161-3163 (2007)