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Optimizing the Ag/Bi ratio for controlled growth of AgBiS2 thin films via a two-stage process

U. CHALAPATHI1, KIRAKALA KIRAN KUMAR2, ATHIPALLI DIVYA3, RADHALAYAM DHANALAKSHMI4, KRITHIKAA MOHANARANGAM5, CUDDAPAH DHANANJAYA RAO6, SAMBASIVAM SANGARAJU7, C. SAFAROV ABDUVAHID SHUKUROVICH8, VASUDEVAREDDY MINNAM REDDY9,10, SI-HYUN PARK1,*

Affiliation

  1. Department of Electronic Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan, Gyeongbuk 38541, South Korea
  2. Department of General Physics, Termez State University, Termez, 190111, Uzbekistan
  3. Department of Physics, School of Technology, The Apollo University, Chittoor, A.P., 517127, India
  4. Department of Physics, University of Santiago of Chile (USACH), Santiago, Chile
  5. Symbiosis Institute of Technology, Pune Campus, Symbiosis International (Deemed University), Pune, India
  6. Department of Physics and Astronomy, Navoi State University, Navoi, 210100, Uzbekistan
  7. National Water & Energy Center, United Arab Emirates University, Al Ain, 15551, UA
  8. Department of Physics and Mathematics Termez State University, Termez, 190111, Uzbekistan
  9. Department of Mathematics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences (SIMATS), Thandalam, Chennai, 602105, India
  10. School of Chemical Engineering, Yeungnam University, Gyeongsan-si, 38541, South Korea

Abstract

This study focuses on synthesizing AgBiS2 thin films by sulfurizing Bi/Ag metal precursors in a graphite box. At a ratio of 1.26, Ag2S secondary phase was present, resulting in nonuniform grain growth, a 0.99 eV energy gap, and 640 Ω cm resistivity. Near-stoichiometric ratios (1.07 and 0.90) eliminated secondary phases, yielding phase-pure AgBiS2 with uniform grains, a 1.02 eV energy gap, and 13.7 Ω cm resistivity. At a 0.79 ratio, increased crystallinity and resistivity (25 Ω cm) were observed. These results highlight the importance of stoichiometry in fabricating high-quality AgBiS2 films for solar cells..

Keywords

AgBiS2, Thin films, Evaporation.

Submitted at: May 8, 2025
Accepted at: Dec. 4, 2025

Citation

U. CHALAPATHI, KIRAKALA KIRAN KUMAR, ATHIPALLI DIVYA, RADHALAYAM DHANALAKSHMI, KRITHIKAA MOHANARANGAM, CUDDAPAH DHANANJAYA RAO, SAMBASIVAM SANGARAJU, C. SAFAROV ABDUVAHID SHUKUROVICH, VASUDEVAREDDY MINNAM REDDY, SI-HYUN PARK, Optimizing the Ag/Bi ratio for controlled growth of AgBiS2 thin films via a two-stage process, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 11-12, pp. 596-603 (2025)