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Percolation phenomena in Si – SiO2 nanocomposite films

I. STAVARACHE1, M. L. CIUREA1,*

Affiliation

  1. National Institute of Materials Physics, 077125 Bucharest - Măgurele, P.O. Box MG-7, Romania

Abstract

Current – voltage characteristics of samples containing silicon nanodots embedded in an amorphous silicon dioxide matrix were investigated. A percolation mechanism was evidenced by the dependence on the concentration of the initial differential conductance and by the appearance of several thresholds in the I – V characteristics..

Keywords

Silicon nanocrystals, Electrical properties, Percolation.

Submitted at: May 16, 2007
Accepted at: Aug. 18, 2007

Citation

I. STAVARACHE, M. L. CIUREA, Percolation phenomena in Si – SiO2 nanocomposite films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 8, pp. 2644-2647 (2007)