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Performance analysis of pentacene-based OTFTs for high-speed circuit applications

D. NEBTI1,* , H. DOGHMANE2, E. SAKHER3, L. TOUATI TLIBA4, A. DOGHMANE2

Affiliation

  1. Laboratoire de Recherche sur le Médicament et Développement Durable, Faculté de Génie des Procédés, Université Constantine 3, Ali Mendjeli, Constantine 25000, Algeria
  2. Laboratory of Semiconductors, Faculty of Sciences, Badji Mokhtar -Annaba University, Annaba, 23000, Algeria
  3. Faculty of Science and Technology, University Mohamed Cherif Messaadia of Souk Ahras, 41000, Algeria
  4. Photonics Group, Renewable Energy Development Research Unit in Arid Zones, University of El Oued, Algeria

Abstract

The aim of this article is to analyse the performance of an organic thin film transistor (OTFT) for high-speed circuits. As such, a simulation of the device with several insulators and different geometric parameters was conducted via Silvaco-TCAD. To assess the real performance of the device, we modelled the interface charge traps associated with the structural disorder of HfO₂ using a continuous trap density of states. Ion/Ioff current ratio of 6.4x108 and a switching frequency of 2.2 MHz were obtained in the optimal structure using HfO₂. The results suggest that the present OTFT, has potential applications in high-speed digital circuits..

Keywords

OTFT, Electrical characteristics, Pentacene, Silvaco-TCAD, Switching frequency, Continuous trap density, Structural disorder.

Submitted at: Oct. 21, 2025
Accepted at: June 2, 2026

Citation

D. NEBTI, H. DOGHMANE, E. SAKHER, L. TOUATI TLIBA, A. DOGHMANE, Performance analysis of pentacene-based OTFTs for high-speed circuit applications, Journal of Optoelectronics and Advanced Materials Vol. 28, Iss. 5-6, pp. 283-296 (2026)