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Phase-change electrical memory elements and devices

M. POPESCU1,* , A. LŐRINCZI1, F. SAVA1, A. VELEA1, E. MATEI1, G. SOCOL2, I. N. MIHĂILESCU2

Affiliation

  1. National Institute of Materials Physics, Bucharest-Măgurele, P.O. Box MG .7, Romania
  2. National Institute of Lasers, Plasma and Radiation Physics, Bucharest-Măgurele, P. O. Box MG. 7, Romania

Abstract

Electrical memory elements based on Ge-Sb-Te pure and doped by Sn-Se have been obtained by pulsed laser deposition on special substrates covered by gold as well as on common glass. A set of electrical memory elements in a 4x4 matrix structure on the glass substrate has been produced. Devices with 3 and 10 memory elements have been constructed and tested for their memory properties. The special features of the voltage-current characteristics have been revealed..

Keywords

Phase-change material; Chalcogenide; Ge-Sb-Te; Memory element; Memory device; Voltage-current characteristics.

Submitted at: Sept. 1, 2008
Accepted at: Oct. 7, 2008

Citation

M. POPESCU, A. LŐRINCZI, F. SAVA, A. VELEA, E. MATEI, G. SOCOL, I. N. MIHĂILESCU, Phase-change electrical memory elements and devices, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2616-2621 (2008)