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Phase transition in Se-Te thin film on UV illumination

V. SHARMA1,* , A. THAKUR2

Affiliation

  1. Jaypee University of Information Technology, Waknaghat, Solan – 173 215, India
  2. University College of Engineering, Punjabi University, Patiala-147 002, India

Abstract

The Se-Te glassy alloy presents an interesting alternative with respect to application point of view. These alloys are more advantageous as compared to a-Se. The alloy witnesses different changes in its structural, optical and electrical properties on treating it with electromagnetic radiation. This gives an important method to investigate the different possibilities of applications of these materials like switching, memory devices, phase change recording devices etc. The present paper reports such changes observed on exposing the a-Se85Te15 thin film deposited by vacuum evaporation technique. The optical band gap of the alloy decreases on exposing the thin film to UV radiation. The absorption coefficient of the illuminated thin film shows an increase. The structural study of the thin films indicates a clear transition from amorphous to nano-crystallite structure..

Keywords

Se-Te amorphous film, Phase transition, UV irradiation.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

V. SHARMA, A. THAKUR, Phase transition in Se-Te thin film on UV illumination, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3097-3099 (2007)