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Phase transition of gallium containing telluride thin films♣

P. PETKOV1, V. ILCHEVA2,* , D. WAMWANGI3, M. WUTTIG3, P. ILCHEV4, T. PETKOVA2

Affiliation

  1. University of Chemical Technology & Metallurgy, Department of Physics , Sofia, Bulgaria
  2. Institute of Electrochemistry and Energy Systems, BAS, Sofia, Bulgaria
  3. Aachen University (RWTH), Physics Department 1A, Aachen, Germany
  4. Central Laboratory of Photoprocesses “Acad. J. Malinowski”, BAS, Sofia, Bulgaria

Abstract

The phase transition of thin (GeTe5)1-xGax films has been investigated using the temperature dependent sheet resistance method. The dependence of the resistance upon the gallium content and temperature has been discussed. The films with the highest gallium content of 20 mol.% exhibit two transitions in the sheet resistance at 90°C and 250 °C, where the sheet resistance changes by 3 orders of magnitude..

Keywords

Chalcogenide glasses, Thin films, Sheet resistance.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

P. PETKOV, V. ILCHEVA, D. WAMWANGI, M. WUTTIG, P. ILCHEV, T. PETKOVA, Phase transition of gallium containing telluride thin films♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1261-1264 (2009)