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Photoelectrical characteristic of isotype N+-GaSb / no-GaInAsSb / N+- GaAlAsSb type II heterojunctıons

M. AHMETOGLU (AFRAILOV)1,* , M. OZER1, O. KADİROV2, S. R. BOYDEDAYEV2

Affiliation

  1. Department of Physics, Uludag University, 16059, Görukle, Bursa, Turkey
  2. Department of Physics, Namangan State Engineering- Pedagogical Institute, Namangan, Uzbekistan

Abstract

Photoelectrical characteristics and energy diagrams have been studied for LPE grown isotype heterostructures latticematched to GaSb substrates. The photocurrent sign dependence on photon energy as a function of forward bias in isotype N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb heterojunctions due to hole confinement at the type II interface is observed and discussed. This effect is due to modulation of the barrier transparency at the interface limiting the tunnel transitions of the conduction electrons and to the localization of photoholes in the potential well at the type II interface. The sign reversal of the photocurrent on photon energy as a function of applied voltage takes place only on the forward bias..

Keywords

Photoelectrical characteristics, İsotype heterostructures, Photocurrent sign.

Submitted at: May 23, 2008
Accepted at: Oct. 7, 2008

Citation

M. AHMETOGLU (AFRAILOV), M. OZER, O. KADİROV, S. R. BOYDEDAYEV, Photoelectrical characteristic of isotype N+-GaSb / no-GaInAsSb / N+- GaAlAsSb type II heterojunctıons, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2511-2514 (2008)