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Photoinduced changes of optical reflectivity in As2S3-Al system

V. GERBREDERS1, J. TETERIS2, E. SLEDEVSKIS1,2,* , A. BULANOVS1

Affiliation

  1. Daugavpils University, Department of Physics, 1 Parades St., Daugavpils, LV-5400, Latvia
  2. Institute of Solid State Physics, University of Latvia, 8 Kengaraga St., Riga, LV-1063, Latvia

Abstract

Photoimpact on As2S3 films results the modulation of optical refractive-index accompanied by the modification of interference conditions for light in thin layers. To increase the value of optical reflection amplitude between interference maximum and minimum the amorphous As2S3 films were obtained by thermal evaporation in vacuum onto glass substrates preliminarily coated with aluminium. The monitoring of the reflectivity at wavelength of 532 nm during the evaporation process of As2S3 layer allowed to obtain the As2S3-Al pattern with initial reflection value of 10-15%. The samples during the experiment were exposed to the light with wavelength of 532 nm with different intensity. An increase of reflectivity up to 75% was observed. This paper presents the studies of dependence for photoinduced changes in reflectivity of As2S3-Al system on exposure time, light intensity and film thickness. The holographic recording in reflection mode was performed and studied..

Keywords

Amorphous chalcogenide films, Reflectivity of the system, Holographic recording.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

V. GERBREDERS, J. TETERIS, E. SLEDEVSKIS, A. BULANOVS, Photoinduced changes of optical reflectivity in As2S3-Al system, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3153-3156 (2007)