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Photoinduced effects in amorphous Ge-Se films

QIMING LIU1,* , XIUJIAN ZHAO1, FUXI GAN2

Affiliation

  1. Key Laboratory of Silicate Materials Science and Engneering (Wuhan University of Technology), Ministry of Education, 122 Luoshi Road, Hongshan District, Wuhan, Hubei 430070, P. R. China
  2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, 201800, P. R. China School of Information Sciences and Engineering, Fudan University, Shangh

Abstract

With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphous GeSe2 films were investigated with the X-ray diffraction (XRD), infrared absorption (IR), scanning electron microscope (SEM), transmitting electron microscope (TEM) and transmittance spectra analysis. It was observed that the optical transmittance edges of films shifted to shorter wavelength according to annealing and light illumination and the shift in well-annealed films could be recovered by annealing at 200 oC for 1 h in Ar air. The magnitude of shift increased with the increase of the intensity of illumination light and the illumination time. By sides, photoinduced crystallization was also observed in the exposed regions of GeSe2 films and more of it was observed with stronger intensity of illumination light..

Keywords

Amorphous GeSe2 films, Photobleaching, Photoinduced crystallization.

Submitted at: Jan. 18, 2006
Accepted at: Sept. 13, 2006

Citation

QIMING LIU, XIUJIAN ZHAO, FUXI GAN, Photoinduced effects in amorphous Ge-Se films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 5, pp. 1838-1842 (2006)