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Photoluminescence and electrical conductivity of silicon containing multilayer structures of diamond like carbon

N. DWIVEDI1, S. KUMAR1,* , C. M. S. RAUTHAN1, O. S. PANWAR1, P. K. SIWACH1

Affiliation

  1. Plasma Processed Materials Group, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi - 110 012, India

Abstract

Photoluminescence and electrical conductivity of silicon containing multilayer structures of diamond like carbon were studied. These multilayer structures were deposited in a sequence a-Si:H/ Si-(a-C:H)/ a-C:H using conventional RF-PECVD technique. It was found that with the variation of silane partial pressure during the growth of middle layer (Si-(a-C:H)), the optical, electrical and photoluminescence properties of these multilayer structure varied. Electrical conductivity showed negative thermally activated process in these multilayer structure which disappeared after annealing the samples at 250 0 C. The role of a-C:H as protective layer for luminescent Si-(a-C:H) layer has also been emphasized..

Keywords

Multilayer structures, Diamond like carbon, Photoluminescence, Electrical conductivity.

Submitted at: Nov. 3, 2009
Accepted at: Nov. 19, 2009

Citation

N. DWIVEDI, S. KUMAR, C. M. S. RAUTHAN, O. S. PANWAR, P. K. SIWACH, Photoluminescence and electrical conductivity of silicon containing multilayer structures of diamond like carbon, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1618-1626 (2009)