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Photoluminescence and local structure in GeS2-Ga2S3-Er2S3 glasses

Z. G. IVANOVA1,*

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

Abstract

In this report, some main results on the photoluminescence (PL) of (GeS2)80(Ga2S3)20 glasses doped with different amounts of Er (from 0.2 to 1.4 at %) have been performed. The broad PL band centred at ~1540 nm has been characterized, according to the 4I15/2 → 4I13/2 transition in the energy Stark splitting diagram of Er3+ state. The influence of Er content on the PL line-shape at 300, 77 and 4.2 K has been studied. A quenching effect at 1.22 at % Er has been established from the development of the emission cross-section by increasing Er3+-doping level. Decreasing temperature down to 4.2 K, a narrowing effect of the emission cross-section has been observed, which leads to improved PL efficiency. The distribution and changes of the basic structural units in the glasses studied have been defined by Raman scattering in the range of 50- 550 nm..

Keywords

Chalcogenide glasses, Rare earth doping, Photoluminescence.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

Z. G. IVANOVA, Photoluminescence and local structure in GeS2-Ga2S3-Er2S3 glasses, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3149-3152 (2007)