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Photoluminescence in chalcogenide glasses: revisited

K. TANAKA1,2,*

Affiliation

  1. Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo Kita-ku, 060-8628, Japan
  2. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Nam. Cs. Legii 565, 530 02 Pardubice, Czech Republic

Abstract

Briefly reviewing photoluminescence spectra in chalcogenide glasses such as As2S3, we propose a new idea for the emission spectrum peaking at around half the bandgap energy. The spectrum is connected with a Fermi level, located near mid-gaps, and a weak absorption tail, which is produced by anti-bonding states of wrong and strained bonds. In covalent chalcogenide glasses, the wrong (homopolar) bond forms more dominant gap states than those by dangling bonds..

Keywords

Photoluminescence, Chalcogenide, Defect, Fatigue.

Submitted at: Oct. 21, 2013
Accepted at: Nov. 7, 2013

Citation

K. TANAKA, Photoluminescence in chalcogenide glasses: revisited, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 11-12, pp. 1165-1178 (2013)