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Photoluminescence lifetime studies of a-Si:H and a-SiN:H

T. AOKI1,* , K. IKEDA1, N. OHRUI1, S. KOBAYASHI1, K. SHIMAKAWAa2

Affiliation

  1. Department of Electronics and Computer Engineering, & Joint Research Center of High-technology, Tokyo Polytechnic University, Atsugi, 243-0297, Japan
  2. Department of Electrical and Electronic Engineering, Gifu University, Gifu, 501-1193, Japan

Abstract

We present recent developments in the study of the photoluminescence (PL) lifetime of a-Si:H; in particular, PL excitation (PLE) spectra of singlet- and triplet-excitons and distant-pair (DP) components, and the effects of the defect density on the triple-peak PL lifetime distributions. PLE of the two excitonic components suggests the presence of exciton absorption. Introducing defects significantly quenches the DP components by non-radiative tunneling (NRT) recombination. The lifetime distribution of a-SiN:H obtained by wideband quadrature frequency resolved spectroscopy (QFRS) exhibits a triple-peak structure as well, and its dependences on temperature and generation rate are similar to those of a-Si:H, except for the short-lived lifetime of ∼10 ns in a-SiN:H in contrast to that of ∼1 μs in a-Si:H. The QFRS study gives spin exchange energy and photon emission rates of the excitons of a-SiN:H..

Keywords

a-Si:H, a-SiNx:H, Wideband-QFRS, Exciton, Distant-pair, PLE, Non-radiative tunneling, IR biasing.

Submitted at: Nov. 28, 2006
Accepted at: Jan. 15, 2007

Citation

T. AOKI, K. IKEDA, N. OHRUI, S. KOBAYASHI, K. SHIMAKAWAa, Photoluminescence lifetime studies of a-Si:H and a-SiN:H, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 1, pp. 70-76 (2007)