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Photoluminescence of Eu3+ and Sm3+ ions in SiO2, SiO2:Na2O films formed from gels and ion implanted silica

J. C. PIVIN1,* , M. SENDOVA-VASSILEVA2, G. LAGARDE3, F. SINGH4, A. PODHORODECKI5, J. MISIEWICZ5

Affiliation

  1. CSNSM-IN2P3, Bâtiment 108, 91405 Orsay Campus, France
  2. CL SENES, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
  3. IPN, Bâtiment 100, 91405 Orsay Campus, France
  4. Nuclear Science Centre, Aruna Asaf Ali Marg, Post Box- 10502, New Delhi, India
  5. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

Abstract

Thin films of silica containing various concentrations of Eu3+ or Sm3+ ions were prepared by sol-gel chemistry and ion implantation for comparing the optical properties of these rare earth ions in both types of matrices after annealing. Sodium acetate was added in some of the gel films for investigating the changes in the crystal field and its influence on the RE emission. We found that the optimal temperature of annealing in air for the release of C and H from gels or defects from ion implanted silica, without segregating the rare earth, is of about 600 °C. The photoluminescence of Eu3+ and Sm3+ is enhanced significantly with the addition of Na in gels and the emission of Eu3+ becomes 20 times as intense as in silica implanted with the same concentration of Eu3+ ions..

Keywords

Sol-gel, Rare earth, Luminescence.

Submitted at: Nov. 14, 2006
Accepted at: June 15, 2007

Citation

J. C. PIVIN, M. SENDOVA-VASSILEVA, G. LAGARDE, F. SINGH, A. PODHORODECKI, J. MISIEWICZ, Photoluminescence of Eu3+ and Sm3+ ions in SiO2, SiO2:Na2O films formed from gels and ion implanted silica, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 6, pp. 1872-1877 (2007)