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Post-annealing effects on the structural properties and residual stress of Ta2O5 thin films deposited by ion beam sputtering

S. G. YOON1, S. M. KANG1, D. H. YOON1,2,*

Affiliation

  1. Dept. of Advanced Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
  2. Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea

Abstract

We studied the structural properties and residual stress of Ta2O5 thin films deposited by single ion beam sputtering (SIBS) and dual ion beam sputtering (DIBS) as a function of the annealing temperatures (200 ~ 800 oC). With the increase of the annealing temperatures, the refractive indexes of the Ta2O5 films deposited by both SIBS and DIBS processes continuously decreased. The residual stress of the post-annealed film could be minimized at an annealing temperature of 400 oC. - According to the XRD analysis, the crystallization temperature of Ta2O5 is found around 600 oC. As the annealing temperature was increased to 600 oC, the oxygen-concentration in the film continuously increased, but it started to saturate in the temperature range 600 oC - 800 oC..

Keywords

Residual stress, Dual ion beam sputtering (DIBS), Ta2O5, Thin films.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

S. G. YOON, S. M. KANG, D. H. YOON, Post-annealing effects on the structural properties and residual stress of Ta2O5 thin films deposited by ion beam sputtering, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1246-1249 (2007)