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Preparation and magnetic properties of the (1-x)BiFeO3 – xBaTiO3 solid solutions

A. IANCULESCU1, L. MITOSERIU2,* , H. CHIRIAC3, M. M. CARNASCIALI4, A. BRAILEANU5, R. TRUSCA6

Affiliation

  1. Polytechnics University of Bucharest, 1-7 Gh. Polizu, P.O. Box 12-134, 011061 Bucharest, Romania
  2. Department of Solid State and Theoretical Physics, Al. I. Cuza Univ., 11 Bv. Carol I, 700506 Iasi, Romania
  3. National Institute of Research and Development for Technical Physics, Iasi 700050, Romania
  4. Dept. of Chemistry and Industrial Chemistry, Univ. of Genoa, 31 Via Dodecaneso, Genoa I-16146, Italy
  5. Institute of Physical Chemistry Ilie Murgulescu of the Romanian Academy, 202 Spl. Independentei, 060021 Bucharest, Romania
  6. S.C. METAV – Research & Development Bucharest, 31 C. A. Rosetti, 020011 Bucharest, Romania

Abstract

(1-x)BiFeO3 – xBaTiO3 (0 ≤ x ≤ 0.30) ceramics were prepared by the solid state reaction method. After sintering at 800°C/1h and slow cooling, single phase compositions were obtained for both presintered and sintered samples, including the composition x=0, which was rarely reported. The gradual attenuation of the rhombohedral distortion with the increase of BaTiO3 content was pointed out. The BaTiO3 admixture acts also as inhibitor for the grain growth process, contributing to the decrease of the average grain size. The compositions corresponding to x=0.30 exhibits multiferroic behavior at room temperature, having both antiferromagnetic and ferroelectric order and low losses (< 3%). The Raman activity proved the existence of the local non-centrosymmetry and of some grain boundary characteristics at room temperature. The magnetic data indicates a composition-dependent antiferromagnetic character..

Keywords

Magnetic properties, Solid solutions BiFeO3-BaTiO3.

Submitted at: April 1, 2008
Accepted at: July 1, 2008

Citation

A. IANCULESCU, L. MITOSERIU, H. CHIRIAC, M. M. CARNASCIALI, A. BRAILEANU, R. TRUSCA, Preparation and magnetic properties of the (1-x)BiFeO3 – xBaTiO3 solid solutions, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 7, pp. 1805-1809 (2008)