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Primary defects in silicon: existence, characteristics, and their role after high fluence irradiation

S. LAZANU1,* , I. LAZANU2, V. CIUPINA3, G. PRODAN3

Affiliation

  1. National Institute for Materials Physics, Bucharest-Magurele, POBox MG-7, Romania
  2. University of Bucharest, Bucharest-Magurele, POBox MG-11, Romania
  3. “Ovidius” University, Constantza, Romania

Abstract

In this contribution, an extensive analysis of the primary defects in silicon: vacancy, interstitial and SiFFCD is performed. Irradiation studies are a useful tool to study production, characteristics and annealing of defects. The experimental results obtained after high proton fluence irradiation of silicon detectors are used in this paper to understand aspects related to the existence and proprieties of primary defects. Investigations on possible differences induced by irradiation in the lattice of silicon, using transmission electron microscopy analysis, have been started and some first preliminary results are presented..

Keywords

Primary defects, Characterisation of defects, Silicon detectors, Radiation damage, HRTEM, HEP experiments.

Submitted at: Nov. 2, 2006
Accepted at: April 15, 2007

Citation

S. LAZANU, I. LAZANU, V. CIUPINA, G. PRODAN, Primary defects in silicon: existence, characteristics, and their role after high fluence irradiation, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 4, pp. 814-817 (2007)