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Properties of BNx nanolayers prepared by rapid thermal annealing♣

G. BESHKOV1,* , D. SPASSOV1, T. IVANOVA2, K. GESHEVA2, D. GOGOVA2, V. KRASTEV3

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

The possibility for preparation of boron nitride nanolayers with thickness of 3-7 nm, using Rapid Thermal Annealing (RTA), as well as the properties of the obtained films in dependence of the technological conditions are investigated. Boron nitride layers were prepared as follows: thin boron films were deposited on sapphire (Al 2O 3) substrates by vacuum evaporation. The resulting B/Al 2O 3 structures were submitted to RTA in ammonia (NH3) ambient at annealing temperatures of 800, 1000, 1200 and 1400 oC, for annealing times of 15, 30, 60 and 180 s. The resulting films were studied using X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy, Fourier Transform InfraRed Spectroscopy and Raman Spectroscopy. The resistance of the films was measured by a four-probe method. It was established that RTA increases the resistivity of the films. The XPS data undoubtedly show the formation of B-N bonds. The obtained BN films have a hexagonal structure, with a needle-like surface morphology..

Keywords

Boron nitride (BN); Rapid thermal processing (RTP).

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

G. BESHKOV, D. SPASSOV, T. IVANOVA, K. GESHEVA, D. GOGOVA, V. KRASTEV, Properties of BNx nanolayers prepared by rapid thermal annealing♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1483-1486 (2009)