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Properties of pure and light antimony-doped tin oxide thin films prepared by e-beam technique

H. A. MOHAMED1,2,*

Affiliation

  1. Physics department, faculty of Science, Sohag University, 82524 Sohag, Egypt
  2. Physics department, Teachers College , King Saud University, 11148 Riyadh, KSA

Abstract

Transparent conducting antimony-doped tin oxide SnO 2 :Sb films were prepared on glass substrates by e-beam evaporation technique. The effect of Sb-content and annealing temperature on the optical, electrical and structural properties of the formed films were investigated. The as-deposited films showed amorphous structure and low transmittance that increased with increasing Sb-content. Upon annealing, the film ordering enhanced. The annealed SnO2 100–x Sbx (x= 3 wt%) films showed the minimum resistivity of ~ 6 × 10 -3 Ω cm at temperature 400 o C and its transmittance exceeded 84 % in the visible region. The other parameters such as free carrier concentrations, refractive index, Urbach energy were calculated for as-deposited and annealed films..

Keywords

SnO2:Sb films, Optoelectronic measurements.

Submitted at: Nov. 1, 2009
Accepted at: Nov. 19, 2009

Citation

H. A. MOHAMED, Properties of pure and light antimony-doped tin oxide thin films prepared by e-beam technique, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1794-1799 (2009)