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Properties of TiO2 thin films deposited by RF magnetron sputtering

C. SIMA1,* , W. WALDHAUSER2, J. LACKNER2, M. KAHNa2, I. NICOLAE1, C. VIESPE1, C. GRIGORIU1, A MANEA3

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, P. O. Box MG 36, Bucharest, Romania
  2. Joanneum Forschungs GmbH Laser Center Leoben, Steyergasse 17, 8010 Graz, Austria
  3. National Institute for Materials Physics, P.O. Box MG-7, Bucharest, Romania

Abstract

TiO2 thin films deposited by RF magnetron sputtering have been investigated. The films were deposited on glass, ITO/glass and silicon at room temperature. The deposition was carried out in different experimental conditions, starting from a pure Ti target. We studied the influence of the experimental deposition parameters (power sputtering, Ar and O2 flow rate) on the film properties. The deposition typical conditions were 300-500 W, 10-45 sccm Ar, 3.3-30 sccm O2, at a pressure around 2.7×10-3 mbar. The film structure, morphology, deposition rate, and optical transmission were investigated. Rutile phase was obtained. The titania films deposited with a rate 4-16 nm/minute had 50-1500 nm thickness. Two kinds of TiO2 films have been obtained depending on the experimental conditions: nanocrystalline films with roughness of 3-10 nm and another one with droplets 2-8 μm. The optical transmission in the visible range was between 70 and 95%..

Keywords

Tio2 thin films, RF magnetron sputtering, Nanocrystalline films, Optical transmission.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

C. SIMA, W. WALDHAUSER, J. LACKNER, M. KAHNa, I. NICOLAE, C. VIESPE, C. GRIGORIU, A MANEA, Properties of TiO2 thin films deposited by RF magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1446-1449 (2007)