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Properties of TiO2 thin films prepared by different techniques

F. UNGUREANU1,* , R. MEDIANU2, R. V. GHITA1, C. C. NEGRILA1, P. GHITA1, A. S. MANEA1, M. F. LAZARESCU1

Affiliation

  1. National Institute of Materials Physics, P.O.Box MG-7, Magurele, Bucharest, Romania
  2. National Institute for Laser, Plasma and Radiation Physics, P.O.Box MG-36, Magurele, Bucharest, Romania

Abstract

TiO2 thin films prepared by sol-gel method and by RF magnetron sputtering deposited on p-Si(111), n-GaAs(100), and glass have been investigated by XRD, XPS and AFM techniques. The characteristics of the film: colour, adherence and composition are presented in the case of thermal treatments (500 0C and 800 0C) for sol-gel deposited films as well as for RF sputtering. The TiO2 plasma deposited film is uniform, homogeneous and stoichiometric..

Keywords

TiO2, sol-gel method, RF sputtering, XPS analysis, AFM analysis, TGA analysis.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

F. UNGUREANU, R. MEDIANU, R. V. GHITA, C. C. NEGRILA, P. GHITA, A. S. MANEA, M. F. LAZARESCU, Properties of TiO2 thin films prepared by different techniques, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1457-1461 (2007)