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Proton implantation in silicon: evolution of deep and shallow defect states

V. KOMARNITSKYY1,* , P. HAZDRA1

Affiliation

  1. Department of Microelectronics, Czech Technical University in Prague, Technická 2, CZ-16627, Prague 6, Czech Republic

Abstract

The effect of proton implantation on enhanced formation and evolution of deep and shallow defects levels was investigated in float-zone and Czochralski n-type silicon. Implantation was performed with 700 keV and 1.8 MeV protons to fluences ranging from 7×109 to 5×1013 cm-2. Implanted samples were isochronally annealed up to 500°C. Introduced radiation defects and shallow donors were investigated by DLTS and CV profiling. The results show that proton implantation leads introduces hydrogen donors (HDs) at the proton end-of-range in both materials. The introduction rate of HDs is proportional to implantation fluence and HDs formation is substantially enhanced in Czochralski silicon. HDs anneal out when annealing temperature exceeded 250 °C. At higher temperatures, thermal shallow hydrogen donors (SHD) and thermal donors (TDs) are generated. While in float-zone material TDs form only at the damage maximum, in Czochralski silicon their distribution spreads on both sides for annealing temperatures higher than 400 ºC..

Keywords

Proton implantation, Radiation defects, Silicon, Thermal donors.

Submitted at: May 26, 2008
Accepted at: June 9, 2008

Citation

V. KOMARNITSKYY, P. HAZDRA, Proton implantation in silicon: evolution of deep and shallow defect states, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 6, pp. 1374-1378 (2008)