"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Quantitative analysis of SOI memory cells

B. LONČAR1,* , P. OSMOKROVIĆ2, Z. STANOJEVIĆ2, M. VUJISIĆ2

Affiliation

  1. Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11120 Belgrade, Serbia
  2. Faculty of Electrical Engineering, University of Belgrade,Bulevar Kralja Aleksandra 73, 11120 Belgrade, Serbia

Abstract

A quantitative analysis for describing and discussing design characterization of a SOI (Silicon-on-Insulator) flash memory cell is presented. Expressions for the front gate threshold voltage of a SOI memory cell are derived using equations for the standard SOI MOSFET. Coupling coefficients connecting the control gate with the source and drain region, and with the silicon bulk via charge stored at the floating gate, have to be included in these equations. In this way, the front gate voltage of the standard SOI MOSFET is equal to the voltage of the memory cell floating gate. During analysis, emphasis is put on the case when the back channel is depleted, because in that case coupling between the front and back gate can control the threshold voltage of the control gate. The derived expressions show the influence of the back voltage VG2 and device parameters on the threshold voltage of either the control or floating gate, when the device is fully depleted..

Keywords

SOI MOSFET, Threshold voltage, Coupling coefficients, Silicon film thickness.

Submitted at: Nov. 14, 2006
Accepted at: June 15, 2007

Citation

B. LONČAR, P. OSMOKROVIĆ, Z. STANOJEVIĆ, M. VUJISIĆ, Quantitative analysis of SOI memory cells, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 6, pp. 1856-1860 (2007)