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Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon

M. L. CIUREA1,* , V. IANCU2, I. STAVARACHE1

Affiliation

  1. National Institute of Materials Physics, 077125 Bucharest - Măgurele, P.O. Box MG-7, Romania
  2. Department of Physics, University “Politehnica” of Bucharest, Bucharest 060042, Romania

Abstract

The paper presents a quantum confinement model for the electrical transport, the phototransport and the photoluminescence phenomena in nanocrystalline silicon. The infinite rectangular quantum well was proved to be the best choice for the investigated systems – nanocrystalline porous silicon and silicon nanodots embedded in an amorphous silicon dioxide matrix. Previous microstructure investigations have shown that the nanocrystalline porous silicon is formed by a nanowire network, so that the electron Hamiltonian is the sum of a one-dimensional Bloch-like Hamiltonian and a two dimensional infinite rectangular quantum well. In the case of the silicon nanodots, the quantum well is three-dimensional. In both cases, the quantum well introduces quantum confinement levels in the band gap, the investigated phenomena being related with transitions between these levels..

Keywords

Quantum confinement, Nanocrystalline silicon, Electrical transport, Phototransport, Photoluminescence.

Submitted at: Nov. 1, 2006
Accepted at: Nov. 2, 2006

Citation

M. L. CIUREA, V. IANCU, I. STAVARACHE, Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2156-2160 (2006)