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Quasi-bound states in Kane type semiconductor quantum dots

A. M. BABANLI1,2,* , E. ARTUNÇ2

Affiliation

  1. Institute of Physics, Azerbaijan National Academy of Sciences, 370143, Baku
  2. Department of Physics, University of Süleyman Demirel, Isparta 32260, Turkey

Abstract

In the present study, it is considered that a A3B5 type spherical semiconductor quantum dot surrounded by a very thin insulating spherical layer is placed in an another A3B5 type semiconductor region. It is assumed that the  -type potential barrier for the very thin insulating spherical layer has a radius of a . By using Kane Hamiltonian, it is investigated the scattering resonances of electrons which are scattered from the boundary of the semiconductor dot. By using the continuity conditions for the wave functions and flux discontinuous at the boundary of the semiconductor quantum dot, we have analytically calculated the phase shift and the partial cross section for the scattering of electrons. It has been shown that the quasi-bound states appear as peaks in the cross section..

Keywords

Resonant tunneling, Kane type semiconductor, Quantum dot,  -type potential barrier, Scattering.

Submitted at: April 25, 2013
Accepted at: March 13, 2014

Citation

A. M. BABANLI, E. ARTUNÇ, Quasi-bound states in Kane type semiconductor quantum dots, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 481-485 (2014)