"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Radiative recombination in InSe layered crystal

V. M. KATERYNCHUK1,* , M. Z. KOVALYUK1, V. TOVARNITSKII1

Affiliation

  1. Chernivtsi Department of the Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, 5, I. Vilde St., 58001 Chernivtsi, Ukraine

Abstract

For layered InSe crystals photoluminescence (PL) spectra are investigated and the corresponding radiative transitions are analyzed. It is found that along with the band-to-band transitions the radiative ones with a participation of impurity levels plays substantial role in the light emission spectrum of the semiconductor. This fact is confirmed by the intensities of the radiative bands for the impurity level – c(v)-band transitions and the donor-acceptor recombination. The temperature dependences of the spectrum in the range of 100-300 К had also enabled to establish the dynamics for possibility of these radiative transitions. At temperatures 180-300 К the bands associated with the indirect transitions with participation of indirect free excitons are more intensive. At 100-180 К the intensity of the bands corresponding to the direct transitions with participation of direct free excitons increases. We have determined the energies of the observed PL bands and a band diagram of the corresponding radiative transitions in InSe is established..

Keywords

InSe, Layered crystal, Photoluminescence, Energy diagram.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

V. M. KATERYNCHUK, M. Z. KOVALYUK, V. TOVARNITSKII, Radiative recombination in InSe layered crystal, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1310-1313 (2007)