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Realization of a general single qubit gate in a double quantum dot structure

YUXIA LIU1,* , XINZHU SANG1, CHONGXIU YU1, DAXIONG XU1, JUNYING ZENG1

Affiliation

  1. Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing,100876 China

Abstract

Based on the effect of a resonant laser pulse on an electron, the realization of a general single qubit gate U(α ,φ ) in a double-quantum-dot structure is investigated theoretically. By varying the voltage biases and the parameters of the pulse which acts on the double-dot structure, all single qubit gates can be implemented..

Keywords

Quantum dot, Qubit gate.

Submitted at: April 4, 2007
Accepted at: Dec. 7, 2007

Citation

YUXIA LIU, XINZHU SANG, CHONGXIU YU, DAXIONG XU, JUNYING ZENG, Realization of a general single qubit gate in a double quantum dot structure, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 12, pp. 3860-3862 (2007)