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Realization of pressure sensor in ZnO semiconductor using the combination of photonic structure and FDTD method

C. S. MISHRA1, M. R. NAYAK2, S. K. TRIPATHY3, R. N. SATPATHY4, G. PALAI4,*

Affiliation

  1. Department of ECE, Gandhi Institute for Technological Advancement (GITA), Bhubaneswar, India
  2. Department of Electrical Engineering, Centre for Advanced Post Graduate Studies, Biju Patnaik University and Technology, Odisha, Rourkela, India
  3. National Institute of Technology, Silchar, Assam, India
  4. Faculty of Science and Faculty of Emerging Technology, Sri Sri University, Cuttack, Odisha, India

Abstract

A two-dimensional square-shaped photonic crystal structure with a line defect is considered for pressure sensing application in the current research paper. The operational principle of the investigation of pressure explicitly relies on the field distribution in the defective region, which is made through the FDTD (finite difference time domain) method. Further, the intensities of the output signal are computed through an analytical treatment of the variation of the intrinsic parameter of the crystal. Ultimately, it is found that the amount of pressure exerted associated with the ZnO semiconductor is computed by knowing the intensity at the output end..

Keywords

ZnO, Pressure, 2D photonic crystal, FDTD.

Submitted at: April 29, 2022
Accepted at: Nov. 24, 2023

Citation

C. S. MISHRA, M. R. NAYAK, S. K. TRIPATHY, R. N. SATPATHY, G. PALAI, Realization of pressure sensor in ZnO semiconductor using the combination of photonic structure and FDTD method, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 11-12, pp. 521-526 (2023)