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Recording of surface-relief gratings on amorphous As-S-Se films

A. GERBREDERS1,2,* , J. TETERIS1

Affiliation

  1. Institute of Solid State Physics, University of Latvia
  2. Daugavpils University, Department of Physics, Latvia

Abstract

Holographic recording and surface-relief grating formation process on amorphous As-S-Se thin films was studied depending on recording light wavelength and light beam polarization. The gratings with the period of 0,84 μm were recorded by lasers with wavelength of 325 nm, 442 nm, 488 nm, 514 nm, 532 nm and 633 nm. The dependence of the surface-relief grating formation efficiency on the exposure dose was studied. The vertically (s), horizontally (p), circularly (L and R) polarized light beams and their combinations were used in holographic recording process. The transmission diffraction efficiency during the holographic recording process was measured by the laser light with wavelength of 670 nm. The wet etching of the samples was performed in standard organic alkaline developer produced by Hologramma Ltd and etching process was monitored by measuring the reflection diffraction efficiency at 441.6 nm. The decrease of transmission diffraction efficiency measured at 670 nm was observed by reducing the recording light wavelength. It can be explained by the decrease of recording light penetration depth in the film. The value of reflection diffraction efficiency after dissolving essentially does not depend on wavelength of recording light and reaches 11-14 %. Nevertheless, the value of maximum diffraction efficiency for every recording wavelength corresponds to various exposure doses. The spectral sensitivity and an influence of recording beam polarization position on efficiency of surface-relief formation have been discussed..

Keywords

As-S-Se films, Holographic recording, Diffraction efficiency.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

A. GERBREDERS, J. TETERIS, Recording of surface-relief gratings on amorphous As-S-Se films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3164-3166 (2007)